| PART |
Description |
Maker |
| AM29F080 AM29F080-85FC |
Am29F080 - 8 Megabit (1.048.576 x 8-Bit) CMOS 5.0 Volt-only. Sector Erase Flash Memory Am29F080 - 8兆（1.048.576 × 8位）的CMOS 5.0伏特只。扇区擦除闪
1M X 8 FLASH 5V PROM, 85 ns, PDSO40
|
Laird Technologies, Inc.
SPANSION LLC
|
| TC514402J TC514402J-10 TC514402J-80 TC514402Z-10 T |
1,048,576 x 4 BIT DYNAMIC RAM 1,048,576 × 4位动态随机存储器
MB 3C 3#16 PIN RECP 1,048,576 × 4位动态随机存储器
MB 10C 10#20 PIN RECP 1,048,576 × 4位动态随机存储器
|
Toshiba, Corp.
Maxim Integrated Products, Inc.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
| AM29LV800B-100 AM29LV800B-120 AM29LV800B-150 AM29L |
8 Megabit (1048576 x 8-Bit/524288 x 16-Bit) CMOS 3.0 Volt-only Sectored Flash Memory
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
|
AMD[Advanced Micro Devices]
|
| GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C181 |
1,048,576 words x 16 bit CMOS DRAM, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
HYNIX[Hynix Semiconductor]
|
| MSM51V4400E MSM51V4400E-10 MSM51V4400E-70 |
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字4位动态随机存储器：快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD.
OKI electronic componets
|
| MSM27C1602CZ |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM 1,048,576字16位或2097152字8位一次性可编程
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| THM321020S-10 THM321020S-80 THM321020SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1048576 WORDS x 32 BIT DYNAMIC RAM MODULE
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MSM538001E-XXGS-K MSM538001E-XXRS MSM538001E-XXTS- |
1,048,576-Word x 8-Bit MASKROM
|
OKI electronic componets
|
| M6MGB166S2BWG M6MGT166S2BWG |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M6MGB E99007 |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system
|
Mitsubishi
|
